Image pickup circuit

ABSTRACT

An image pickup circuit including a plurality of circuit blocks. Each of the plurality of circuit blocks includes a plurality of comparing elements, a single counter, and a plurality of storage units. Each of the comparing elements compares a pixel signal supplied through a vertical signal line connected to vertically aligned pixels in a plurality of pixels arranged in a matrix, and a slope signal whose voltage is changed from an initial voltage at a constant slope. The counter counts an elapsed time since a voltage of the slope signal starts to change from the initial voltage. Each of the storage units stores a count value obtained by the counter in accordance with a comparison result of the comparator, the count value corresponding to an elapsed time until the voltage of the slope signal is changed from the initial voltage to a voltage coinciding with the pixel signal.

RELATED APPLICATION DATA

The present application claims the benefit under 35 U.S.C. §120 as acontinuation application of U.S. application Ser. No. 14/963,132, filedDec. 8, 2015, which is a continuation application of U.S. applicationSer. No. 14/689,883, filed Apr. 17, 2015, which is a continuationapplication of U.S. application Ser. No. 13/343,177, filed Jan. 4, 2012,now U.S. Pat. No. 9,041,839, issued on May 26, 2015, which is acontinuation application of U.S. patent application Ser. No. 12/197,372,filed Aug. 25, 2008, now U.S. Pat. No. 8,102,449, issued on Jan. 24,2012, which in turn claims priority to Japanese Patent Application No.JP 2007-225208 filed on Aug. 31, 2007, the entire contents of each ofwhich is incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention relates to an image pickup circuit.

In the recent years, solid-state image pickup devices such as CMOS(complementary metal oxide semiconductor) sensors have been widelyimplemented to portable telephones, compact digital cameras, high-classsingle-lens reflex cameras, camcoders, monitor cameras and guideapparatuses.

Recently, there has been developed a high performance sensor includingan on-chip processing blocks such as an image processing circuittogether with a CMOS sensor to thereby output high quality images.

For example, sensors employing column-parallel A/D (analog to digital)conversion method (hereinafter referred for convenience to as “column ADmethod”) have been proposed.

In the column AD method, an A/D converter is provided for every columnof pixels (hereinafter referred to as a “column” where appropriate), andthe pixel signals (analog signals) of individual pixels for therespective columns are read by one operation and then A/D converteddirectly.

Further, the column AD method employs parallel processing for everyhorizontal line in an image, thus eliminating the necessity forhigh-frequency horizontal scanning. This enables the A/D conversion tobe performed vertically at a low frequency, making it easy to separatesignal components and noise components generated in a high frequencyband.

The configuration of a solid-state image pickup device employing thecolumn AD method will be described here with reference to FIGS. 1 and 2.

FIG. 1 is a block diagram showing the configuration of an example of thesolid-state image pickup device employing the column AD method.

In FIG. 1, a solid-state image pickup device 11 includes a verticalscanning circuit 21, a pixel array 22, vertical signal lines 23 ₁ to 23_(N) (N is a positive integer), current sources 24 ₁ to 24 _(N), a slopegenerating circuit 25, comparators 26 ₁ to 26 _(N), and counters 27 ₁ to27 _(N).

Under control of the controller (not shown), the vertical scanningcircuit 21 supplies sequentially output control signals for controllingthe outputs of pixel signals to vertically aligned pixels 22 ₁ to 22_(N) in the pixel array 22 at a predetermined timing.

The pixel array 22 is composed of a plurality of pixels arranged in amatrix. FIG. 1 shows the pixels 22 ₁ to 22 _(N) disposed in a horizontaldirection for one line, with the vertically aligned pixels omitted. Inthe pixel array 22, the individual pixels 22 _(n) which are verticallyaligned output sequentially a pixel signal on the basis of the outputcontrol signal supplied from the vertical scanning circuit 21.

In the pixel array 22 of FIG. 1, the N pixels 22 ₁ to 22 _(N) aredisposed horizontally (horizontal direction). The pixels 22 _(n) (n=1,2, . . . , N) photoelectrically convert the incident light, and outputthe pixel signal of a voltage corresponding to the light. These pixels22 ₁ to 22 _(N) are connected to the N vertical signal lines 23 ₁ to 23_(N), respectively, and the pixel signals outputted from the pixels 22 ₁to 22 _(N) are supplied through the vertical signal lines 23 ₁ to 23_(N) to one of two input terminals in each of the N comparators 26 ₁ to26 _(N), respectively. The pixels 22 ₁ to 22 _(N) are also groundedthrough the N current sources 24 ₁ to 24 _(N), respectively.

The slope generating circuit 25 supplies a slope signal, whose voltagedrops (or rises) at a constant slope from a predetermined initialvoltage, to the other of the two input terminals in each of the Ncomparators 26 ₁ to 26 _(N), respectively.

The comparators 26 ₁ to 26 _(N) compare the pixel signals supplied fromthe pixels 22 ₁ to 22 _(N), and the slope signal supplied from the slopegenerating circuit 25, and supply comparative signals representing thecomparison results to the N counters 27 ₁ to 27 _(N), respectively.

The counters 27 ₁ to 27 _(N) count a predetermined clock signal on thebasis of the comparative signals supplied from the comparators 26 ₁ to26 _(N), respectively, and supply the count values to the circuit of thesubsequent stage (not shown). In the circuit of the subsequent stage,pixel data (pixel values) are outputted on the basis of the count valuessupplied from the counters 27 ₁ to 27 _(N).

In FIG. 1, the slope generating circuit 25, the comparators 26 _(n), andthe counters 27 _(n) constitute the A/D converter.

The solid-state image pickup device 11 thus configured necessitates thecounters corresponding to the number N of the columns, therebyincreasing the circuit area and power consumption.

FIG. 2 is a block diagram showing the configuration of other example ofthe solid-state image pickup device employing the column AD method.

In FIG. 2, the same references have been used as in FIG. 1 for similarcomponents, and the description thereof is omitted.

In FIG. 2, a solid-state image pickup device 31 includes a verticalscanning circuit 21, a pixel array 22, vertical signal lines 23 ₁ to 23_(N), current sources 24 ₁ to 24 _(N), a slope generating circuit 25,comparators 26 ₁ to 26 _(N), a counter 41, and latch circuits 42 ₁ to 42_(N).

Each of the comparators 26 ₁ to 26 _(N) supply comparative signalsrepresenting the comparison results, to the N latch circuits 42 ₁ to 42_(N), respectively. The comparative signals are obtained by comparingthe pixel signals supplied from the pixels 22 ₁ to 22 _(N) and the slopesignal supplied from the slope generating circuit 25.

The counter 41 counts a predetermined clock signal and supplies thecount value to the latch circuits 42 ₁ to 42 _(N), respectively.

The latch circuits 42 ₁ to 42 _(N) store the count values counted by thesingle counter 41 in response to the comparative signals from thecomparators 26 ₁ to 26 _(N), and supply the stored count values to thecircuit of the subsequent stage (not shown). In the circuit of thesubsequent stage, pixel data are outputted on the basis of the countvalues supplied from the latch circuits 42 ₁ to 42 _(N).

In FIG. 2, the slope generating circuit 25, the comparators 26 n, thecounter 41, and the latch circuits 42 _(n) constitute the A/D converter.

The solid-state image pickup device 31 thus configured can reduce thenumber of counters to only one, namely the counter 41.

However, when the single counter 41 is provided as in the solid-stateimage pickup device 31, a greater distance between the counter 41 andthe latch circuit 42 _(n) causes a greater delay in counted pulseindicating the count value supplied from the counter 41 to the latchcircuit 42 _(n), due to wire resistance and wire capacity. Consequently,between the column of the latch circuit 42 _(n) having a short distanceto the counter 41, and the column of the latch circuit 42 _(n)′ (n′=1,2, . . . , N) having a long distance to the counter 41, a differenceresulted from wire resistance and wire capacity occurs in pixel dataoutputted, thereby adversely affecting image quality.

There are also those having a plurality of arrangements that an A/Dconverter (a comparator and a counter) is shared among a plurality ofcolumns (for example, see Japanese Unexamined Patent ApplicationPublication No. 2006-80861 hereinafter referred to as Patent Document1).

However, in the configuration of the Patent Document 1, the pixelsignals of a plurality of columns are serially transmitted to be A/Dconverted, thus lowering the transmission rate. The counter is requiredto operate for a number of columns, and the power consumption thereofbecomes the same as the power consumption when each of the columns has acounter.

SUMMARY OF THE INVENTION

As described above, it has been difficult for the earlier developedsolid-state image pickup devices to reduce power consumption.

Accordingly, it is desirable to reduce power consumption.

In accordance with one aspect of the present invention, there isprovided an image pickup circuit which includes a plurality of circuitblocks each including a plurality of comparing elements, a singlecounter, and a plurality of storage units. Each of the plurality ofcomparing elements compare a pixel signal supplied through a verticalsignal line connected to vertically aligned pixels in a plurality ofpixels arranged in a matrix, and a slope signal whose voltage is changedfrom an initial voltage at a constant slope. The single counter countsan elapsed time since a voltage of the slope signal is started to changefrom the initial voltage. Each of the plurality of storage units store acount valued obtained by the counter, in accordance with a comparisonresult of the comparing elements, the count value corresponding to anelapsed time until the voltage of the slope signal is changed from theinitial voltage to a voltage coinciding with the pixel signal.

In one embodiment, a pixel column in one circuit block among theplurality of circuit blocks may be arranged between two adjacent pixelcolumns aligned vertically in another one circuit block among theplurality of circuit blocks.

In one embodiment, a pixel signal of a pixel in the pixel column in onecircuit block among the plurality of circuit blocks and a pixel signalof a pixel in the pixel column aligned vertically in another one circuitblock among the plurality of circuit blocks may be added.

In one embodiment, a pixel signal of a pixel in the pixel column in onecircuit block among the plurality of circuit blocks arranged between twoadjacent pixel columns aligned vertically in another one circuit blockamong the plurality of circuit blocks may be thinned out.

In one embodiment, the storage unit may include a latch circuit or asample-hold circuit.

The circuit blocks may further may include selecting elements forselecting the pixel signals supplied from the plurality of the verticalsignal lines to supply the selected pixel signals to the comparators.

According to one embodiment, in the plurality of circuit blocks, theplurality of comparators compare a pixel signal supplied through thevertical signal line connected to the vertically aligned pixels in theplurality of pixels arranged in the matrix, and the slope signal whosevoltage is changed at the constant slope from the predetermined initialvoltage. In accordance with the comparison result of the comparators,the plurality of storage units store the count value obtained by thesingle counter, corresponding to the elapsed time until the slope signalvoltage is changed from the initial voltage to the voltage coincidingwith the pixel signal.

According to an embodiment of the present invention, the image pickupcircuit is capable of reducing power consumption.

The above summary of the present invention is not intended to describeeach illustrated embodiment or every implementation of the presentinvention. The figures and the detailed description which follow moreparticularly exemplify these embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the configuration of an embodiment ofa solid-state image pickup device employing column AD method;

FIG. 2 is a block diagram showing the configuration of other embodimentof the solid-state image pickup device employing the column AD method;

FIG. 3 is a block diagram showing a configuration example of anembodiment of the solid-state image pickup device to which the presentinvention is applied;

FIG. 4 is a time chart for explaining the operation of the solid-stateimage pickup device;

FIG. 5 is a block diagram showing a configuration example of asolid-state image pickup device in which a counter is shared among allcolumns;

FIG. 6 is a circuit diagram modeling wire resistance and wire capacitygenerated in the solid-state image pickup device of FIG. 5;

FIG. 7 is a block diagram showing a configuration example of otherembodiment of the solid-state image pickup device to which the presentinvention is applied; and

FIG. 8 is a block diagram showing a configuration example of still otherembodiment of the solid-state image pickup device to which the presentinvention is applied.

DETAILED DESCRIPTION OF EMBODIMENTS

Before describing the following embodiments of the invention, theassociation between the configuration requirements of the invention andthe embodiments described and shown in the specification or the drawingswill be described below. That is, the following is to confirm that theembodiments supporting the invention are described and shown in thespecification or the drawings. Even if there is a certain embodimentwhich is described in the specification or the drawings but notdescribed here as an embodiment corresponding to a certain configurationrequirement of the invention, it does not mean that this embodiment doesnot correspond to this configuration requirement. Reversely, even if acertain embodiment is described as one corresponding to a certainconfiguration requirement, it does not mean that the embodiment does notcorrespond to any configuration requirement other than that.

The image pickup circuit of one embodiment of the invention includes aplurality of circuit blocks (e.g. circuit blocks BL₁ to BL_(M) in FIG.3), each having a plurality of comparing elements (e.g. comparators 76_(m1) to 76 _(mP) in FIG. 3), a counter (e.g. a counter 77 _(m) in FIG.3) and a plurality of storage units (e.g. latch circuits 78 _(m1) to 78_(mP) in FIG. 3). Each of the plurality of comparing elements compares apixel signal supplied through a vertical signal line connected tovertically aligned pixels in a plurality of pixels arranged in a matrix,and a slope signal whose voltage is changed from a predetermined initialvoltage at a constant slope. The counter counts an elapsed time since avoltage of the slope signal is started to change from the initialvoltage. Each of the plurality of storage units stores a count valueobtained by the counter, in accordance with a comparison result of thecomparing elements, the count value corresponding to an elapsed timeuntil the voltage of the slope signal is changed from the initialvoltage to a voltage coinciding with the pixel signal.

A pixel column aligned vertically in a circuit block (e.g. a circuitblock BL₂ in FIG. 7) among the plurality of circuit blocks may bearranged between two adjacent pixel columns aligned vertically inanother one circuit block (e.g. a circuit block BL₁ in FIG. 7).

In one embodiment, the image pickup device may be configured to add apixel signal of a pixel (e.g. a pixel 72 ₁₁ in FIG. 7) of the pixelcolumn aligned vertically in the one circuit block among the pluralityof circuit blocks, and a pixel signal of a pixel (e.g. a pixel 72 ₂₁ inFIG. 7) of the pixel column aligned vertically in the another onecircuit block among the plurality of circuit blocks.

In one embodiment, the image pickup device may be configured to thin outthe pixel signals of pixels (e.g. pixels 72 ₂₁ to 72 _(2P) in FIG. 7) ofthe pixel columns vertically aligned in one circuit block among theplurality of circuit blocks, wherein the pixel columns are arrangedbetween the two adjacent pixel columns aligned vertically in another onecircuit block, the pixel columns each having pixels (e.g. pixels 72 ₁₁to 72 _(1P) in FIG. 7).

The circuit blocks may further include selecting elements (e.g. switches271 _(m1) to 27 _(1m(P/2))) in FIG. 8) for selecting the pixel signalssupplied from the plurality of vertical signal lines to supply theselected pixel signals to the comparing elements.

Embodiments of the present invention will be described below withreference to the accompanying drawings.

FIG. 3 is block diagram showing a configuration example of thesolid-state image pickup device according to an embodiment of thepresent invention.

A solid-state image pickup device 51 of FIG. 3 may be, for example, aCMOS sensor or other solid-state image pickup device.

In FIG. 3, the solid-state image pickup device 51 includes one verticalscanning circuit 71, one pixel array 72, vertical signal lines thenumber of which is M×P, 73 ₁₁ to 73 _(1P), 73 ₂₁ to 73 _(2P), . . . ,and 73 _(M1) to 73 _(MP) (each M and P is a positive integer,particularly an integer equal to or greater than 2), current sources 74₁₁ to 77 _(1P) the number of which is M×P, 74 ₂₁ to 74 _(2P), . . . ,and 74 _(M1) to 74 _(MP), one slope generating circuit 75, comparatorsthe number of which is M×P, 76 ₁₁ to 76 _(1P), 76 ₂₁ to 76 _(2P), . . ., and 76 _(M1) to 76 _(MP), counters the number of which is M, 77 ₁ to77 _(M), and latch circuits the number of which is M×P, 78 ₁₁ to 78_(1P), 78 ₂₁ to 78 _(2P), . . . , and 78 _(M1) to 78 _(MP).

For the sake of convenience, the arrangement of the vertical signallines 73 ₁₁ to 73 _(1P), 73 ₂₁ to 73 _(2P), . . . , and 73 _(M1) to 73_(MP) are hereinafter referred to as “vertical signal lines 73 ₁₁ to 73_(MP), or “vertical signal lines 73 _(mp) (m=1, 2, . . . , and M; p=1,2, . . . , and P).” The same is applied to other arrangements.

Similarly, the arrangement made up of P vertical signal lines 73 _(m1)to 73 _(mP), P current sources 74 _(m1) to 74 _(mP), P comparators 76_(m1) to 76 _(mP), a counter 77 _(m), and P latch circuits 78 _(m1) to78 _(mP) is hereinafter referred to as a “circuit block BL_(m).” In thiscase, the solid-state image pickup device 51 includes a verticalscanning circuit 71, a pixel array 72, a slope generating circuit 75,and circuit blocks BL₁ to BL_(M) the number of which is M.

Under control of a controller (not shown), the vertical scanning circuit71 supplies sequentially output control signals for controlling theoutputs of pixel signals to the pixels 72 ₁₁ to 72 _(MP) arrangedvertically in the pixel array 72 at a predetermined timing.

The pixel array 72 is composed of a plurality of pixels arranged in amatrix. FIG. 3 shows the pixels 72 ₁₁ to 72 _(MP) horizontally alignedin one column, with vertically aligned pixels omitted. In the pixelarray 72, the vertically aligned individual pixels 72 _(mp) outputsequentially pixel signals on the basis of the output control signalsupplied from the vertical scanning circuit 71.

In the pixel array 72 of FIG. 3, the pixels 72 ₁₁ to 72 _(MP) the numberof which is M×P are arranged horizontally. The pixel 72 _(mp)photoelectrically converts the incident light, and outputs the pixelsignal of a voltage corresponding to the light. These pixels 72 ₁₁ to 72_(MP) are connected to the M×P vertical signal lines 73 ₁₁ to 73 _(MP),respectively, and the pixel signals outputted from the pixels 72 ₁₁ to72 _(MP) are supplied through the vertical signal lines 73 ₁₁ to 73_(MP) to one of two input terminals in each of the comparators 76 ₁₁ to76 _(MP) the number of which is M×P, respectively. The pixels 72 ₁₁ to72 _(MP) are also grounded through the M×P current sources 74 ₁₁ to 74_(MP), respectively.

The slope generating circuit 75 supplies a slope signal, whose voltageis changed, namely drop (or rise), at a constant slope from an initialvoltage, to the other of the two input terminals in each of thecomparators 76 ₁₁ to 76 _(MP), respectively.

The comparators 76 ₁₁ to 76 _(MP) compare the pixel signals suppliedfrom the pixels 72 ₁₁ to 72 _(MP) and the slope signal supplied from theslope generating circuit 75, and supply comparative signals representingthe comparison results to the latch circuits the number of which is M×P,78 ₁₁ to 78 _(MP), respectively.

The counters 77 _(m) count a predetermined clock signal in a circuitblock BL_(m), and supply the count value to the latch circuits 78 _(m1)to 78 _(mP).

More specifically, the counter 77 ₁ supplies the count value of a clocksignal to the latch circuits 78 ₁₁ to 78 _(1P) in the circuit block BL₁,and the counter 77 ₂ supplies the count value of a clock signal to thelatch circuits 78 ₂₁ to 78 _(2P) in the circuit block BL₂.

Similarly, the counter 77 _(M) supplies the count value of a clocksignal to the latch circuits 78 _(M1) to 78 _(MP) in the circuit blockBL_(M).

In accordance with the comparative signal from the comparator 76 _(mp),the latch circuit 78 _(mp) stores (latches) the count value counted bythe counters 77 _(m) in the circuit blocks BL_(m), and supplies thestored count value to the circuit of the subsequent stage (not shown).In the circuit of the subsequent stage, pixel data are outputted on thebasis of the count values supplied from the latch circuits 78 _(m1) to78 _(mP).

The slope generating circuit 75, and the comparator 76 mp, the counters77 _(m), and the latch circuit 78 _(mp) in the circuit blocks BL_(m)constitute the A/D converter.

Next, the operation of the solid-state image pickup device 51 will bedescribed with reference to FIG. 4.

FIG. 4 is a timing chart for explaining the operation of the solid-stateimage pickup device 51.

The following is the operation of the solid-state image pickup device51, focusing on the p-th pixel 72 _(mp) of the circuit blocks BL_(m).

In FIG. 4, a slope signal supplied from the slope generating circuit 75to the comparator 76 _(mp), a pixel signal supplied from the pixel 72_(mp) of the pixel array 72 to the comparator 76 _(mp), a comparativesignal supplied from the comparator 76 _(mp) to the latch circuit 78_(mp), and a count value latched by the latch circuit 78 _(mp) areplotted in the top-down order, plotting time as the abscissa.

The slope generating circuit 75 supplies the slope signal whose voltagedrops at a constant slope from an initial voltage, as shown at the firstplot from the top in FIG. 4.

During the time the slope signal voltage drops from the initial voltage,there are a reset phase having a predetermined duration and a signaloutput phase having a longer duration than the reset phase. The slopesignal is a signal causing a reset phase and a signal output phasesubsequent to the reset phase to be repeated in one set form.

The pixel 72 _(mp) of the pixel array 72 supplies a pixel signal to thecomparator 76 _(mp) according to the output control signal supplied fromthe vertical scanning circuit 71, as shown at the second plot from thetop in FIG. 4.

In the solid-state image pickup device 51, light enters the pixel 72_(mp) in the signal output phase, whereas the light entering into thepixel 72 _(mp) is intercepted in the reset phase.

As a result, in the reset phase, noise components are supplied as apixel signal from the pixel 72 _(mp) to the comparator 76 _(mp). Duringthe signal output phase, a pixel signal containing a charge-based signalcomponent corresponding to the light receiving amount of a photodiode(not shown) is supplied from the pixel 72 _(mp) to the comparator 76_(mp).

As shown at the third plot from the top in FIG. 4, the comparator 76_(mp) compares the slope signal and the pixel signal, and supplies an H(high) level comparative signal to the latch circuit 78 _(mp) when thepixel signal voltage is smaller than the slope signal voltage, andsupplies an L (low) level comparative signal to the latch circuit 78_(mp) when the pixel signal voltage is larger than the slope signalvoltage.

Here, the initial voltage of the slope signal is larger than the maximumvalue of voltages attainable by the pixel signal. Accordingly, as theslope signal voltage drops from the initial voltage, the slope signalvoltage is changed from a voltage larger than the pixel signal to avoltage coinciding with the pixel signal. The change of the slope signalvoltage from the voltage larger than the pixel signal to the voltagecoinciding with the pixel signal causes the comparative signal to beinverted from the H level to the L level.

As presented in the fourth plot from the top (the lowermost) of FIG. 4,the comparator 78 _(mp) stores according to the comparative signal fromthe comparator 76 _(mp), the count values (the counted pulses) obtainedby the counters 77 _(m), corresponding to a period of time that theslope signal voltage is changed from the initial voltage to the voltagecoinciding with the pixel signal, and supplies the count values to thecircuit of the subsequent stage (not shown).

That is, the latch circuit 78 _(mp) stores the count values counted bythe counters 77 _(m) (reset phase count values Cp) in the period betweenthe time when the slope signal voltage starts to drop in the reset phaseand the time when the comparative signal is inverted from the H level tothe L level. Thereafter, the latch circuit 78 _(mp) stores the countvalues counted by the counters 77 _(m) (signal output phase count valuesCd) in the period between the time when the slope signal voltage startsto drop in the signal output phase and the time when the comparativesignal is inverted from the H level to the L level. The latch circuit 78_(mp) supplies successively the reset phase count values Cp and thesignal output phase count values Cd to the circuit of the subsequentstage (not shown).

In the circuit of the subsequent stage, a digital CDS (corrected doublesampling) is performed to obtain a difference Cp-Cd between the resetphase count value Cp and the signal output phase count value Cd, and thedifference Cp−Cd is outputted as signal components of pixel data.

As described with reference to FIG. 3, owing to the arrangement that ineach of the plurality of circuit blocks BL₁ to BL_(M), the singlecounter 77 _(m) is shared among P columns (P sets of the comparator 76_(mP) and the latch circuit 78 _(mP)), the number of counters can bereduced to a 1/P than the arrangement that one counter is provided forevery column. This enables the suppression of circuit area, reducingpower consumption.

This is effective to prevent circuit area and power consumption frombeing increased with increasing the number of pixels and the processingspeed in future solid-state image pickup devices.

The counters 77 m may be noise generating source because they operatealmost all of the circuit operating time. However, the solid-state imagepickup device 51 requires less number of the counters 77 _(m), therebyachieving a noise reduction.

Although the individual counters 77 _(m) are shared among the columnsthe number of which is P in the foregoing description, the circuitblocks BL_(m) may have different numbers of columns P sharing theindividual counters 77 _(m).

Preferably, the numbers of columns P sharing the single counter 77 _(m)is determined (optimized) by considering the delay due to wireresistance and wire capacity when the solid-state image pickup device 51is operated at high speed.

FIG. 5 is a block diagram showing a configuration example of thesolid-state image pickup device in which a single counter is sharedamong all columns.

A solid-state image pickup device 111 of FIG. 5 includes comparators 131₁ to 131 ₂₇₀₀ the number of which is 2700, a counter 132, and latchcircuits 133 ₁ to 133 ₂₇₀₀ the number of which is 2700. In the solidstate image pickup device 111, the single counter 132 is shared among2700 columns (2700 sets of a comparator 131 _(i) and a latch circuit 133_(i) (i is an integer in the range 1 to 2700)).

The comparators 131 ₁ to 131 ₂₇₀₀, the counter 132, and the latchcircuits 133 ₁ to 133 ₂₇₀₀ in FIG. 5 have the same basic operations asthe comparator 76 _(mp), the counter 77 _(m) and the latch circuit 78_(mp), respectively, and the description thereof is omitted here.

For example, assuming that the counter 132 counts count values in DDR(double data rate) method by setting the operating frequency at 300 MHz,the count value is incremented by one for 1.67 nsec. It is also assumedthat the count value of the counter 132 is sequentially propagated tothe latch circuits 133 ₁ to 133 ₂₇₀₀ in this order.

It is further assumed that the wire resistance between the adjacentlatch circuits 133 _(i) and 133 _(i+1) is 0.7Ω and the wire capacitytherebetween is 1.48 fF.

In this case, the wire resistance R between the latch circuit 133 ₁having the shortest distance to the counter 132 and the latch circuit133 ₁₇₀₀ having the longest distance to the counter 132 is approximately2 kΩ (≈2700×0.7Ω), and the wire capacity C therebetween is approximately4 pF (≈2700×1.48×10⁻¹⁵ F).

FIG. 6 is a circuit diagram modeling wire resistance and wire capacitygenerated in the solid-state image pickup device 111 of FIG. 5.

In FIG. 6, the latch circuit 1331 having the shortest distance to thecounter 132 is represented by point A, and the latch circuit 133 ₂₇₀₀having the longest distance to the counter 132 is represented by pointB. The wire resistance R and the wire capacity C between the points Aand B are modeled by an n-type circuit.

When a simulation is performed using the circuit shown in FIG. 6, a 1.78nsec delay occurs between the count pulse (the count value) suppliedfrom the counter 132 to the latch circuit 133 ₁ and the count pulsesupplied from the counter 132 to the latch circuit 133 ₂₇₀₀.

This delay is greater than 1.67 nsec for one count of the counter 132,and a difference of one count occurs between the count value in thecolumn having the shortest distance to the counter 132 and the countvalue in the column having the longest distance to the counter 132.

Accordingly, in circuit of the subsequent stage (not shown) to which thecount values from the latch circuits 133 ₁ to 133 ₂₇₀₀ are supplied,when pixel data are outputted by subjecting the count values to gainmultiplication by a predetermined number, a 1 count difference of thecount value in the pixel data outputted is increased to a 4 countdifference in a 4× gain multiplication, a 8 count difference in a 8×gain multiplication, and a 16 count difference in a 16× gainmultiplication.

On the other hand, assuming in the example of FIG. 5 that the number ofcolumns is 675 (=2700/4) and a single counter 132 is shared among the675 columns, the wire resistance and the wire capacity between thecolumn having the shortest distance to the counter 132 and the columnhaving the longest distance to the counter 132 are an approximately ¼ ofthe case where a single counter 132 is shared among 2700 columns. Thatis, the wire resistance R is approximately 0.47 kΩ (≈675×0.7Ω), and thewire capacity C is approximately 1 pF (≈675×1.48×10⁻¹⁵ F).

When the single counter 132 is shared among the 675 columns and thesimulation is performed by using the circuit shown in FIG. 6, a 0.31nsec delay occurs between the counted pulse supplied to the latchcircuit 133 ₁ having the shortest distance to the counter 132 and thecounted pulse supplied to the latch circuit 133 ₆₇₅ having the longestdistance to the counter 132. The value 0.31 nsec is sufficiently smallerthan 1.67 nsec that is the time corresponding to the 1 count of thecounter 132. Consequently, there is no difference between the countvalue in the column having the shortest distance to the counter 132 andthe count value in the column having the longest distance to the counter132.

Thus, deterioration of image quality can be prevented while reducing thepower consumption of the solid-state image pickup device 111, by settingthe number of columns sharing a single counter 132 so that the delay dueto the wire resistance R and the wire capacity C when the solid-stateimage pickup device 111 is operated at high speed becomes sufficientlysmaller than the time required for a 1 count.

That is, when the number of columns of the solid-state image pickupdevice 111 is 2700 as in the case of FIG. 5, the reduction in powerconsumption and the prevention of deterioration in image quality can beachieved by setting four counters similar to the counter 132 so that asingle counter 132 is shared among 675 columns.

FIG. 7 is a block diagram showing a configuration example of thesolid-state image pickup device according to another embodiment of thepresent invention.

In FIG. 7, the same references have been used as in FIG. 3 for similarcomponents, and the description thereof is omitted.

A solid-state image pickup device 151 of FIG. 7 is identical to thesolid-state image pickup device 51 of FIG. 3 in that the device 151includes a vertical scanning circuit 71, a pixel array 72, a slopegenerating circuit 75, and circuit blocks BL₁ to BL_(M) the number ofwhich is M, except for the following point.

That is, in the solid-state image pickup device 151 shown in FIG. 7, acolumn of vertically aligned pixels in a second circuit block BL_(m+1)among the circuit blocks BL_(l) to BL_(M) the number of which is M isarranged between two columns of vertically aligned pixels in a circuitblock BL_(m). In the solid-state image pickup device 51 shown in FIG. 3,the column in the circuit block BL_(m+1) is not arranged between the twocolumns in the first circuit block BL_(m).

More specifically, pixels 72 ₂₁ to 72 _(2P) in the circuit block BL2 arearranged between pixels 72 ₁₁ to 72 _(1P) in the circuit block BL₁,respectively.

Similarly, pixels 72 _(M1) to 72 _(MP) in the circuit block BL_(M) arearranged between pixels 72 _((M−1)1) to 72 _((M−1)P) in the circuitblock BL_(M−1), respectively.

That is, in the pixel array 72 of FIG. 7, pixels 72 ₁₁ to 72 _(MP) thenumber of which is M×P are arranged horizontally, and the order thereofis different from that in the configuration of FIG. 3. These pixels arearranged in the following order: the pixels 72 ₁₁, 72 ₂₁, 72 ₂₂ . . . ,72 _(1P), 72 _(2P) . . . , 72 _((m−1)p), 72 _(mp) . . . , 721 _((M−1)1),72 _(M1), . . . , 72 _((M−1)p) and 72 _(MP).

Thus, in the solid-state image pickup device 151, instead of theconfiguration that a single counter 77 _(m) is shared among the adjacentpixels (columns), a single counter 77 _(m) is shared among pixels(columns) arranged every other pixel columns.

The solid-state image pickup device 151 shown in FIG. 7 has a functionof pixel addition (pixel signal addition), so-called binning function.

That is, the solid-state image pickup device 151 in FIG. 7 has a binningfunction of performing pixel addition between two horizontally adjacentpixels, namely, pixels 72 ₁₁ and 72 ₂₁, pixels 72 ₁₂, and 72 ₂₂, . . . ,pixels 72 _(1P) and 72 _(2P), . . . , respectively. When the binningfunction is turned on, the pixel signals of the horizontally adjacentpixels 72 _(mp) and 72 _((m+1)p) are added, and the pixel signal as theresult of addition is supplied through a vertical signal line 73 _(mp)to a comparator 76 _(mp).

At this time, it is unnecessary to process the pixel signals on thevertical signal line 73 _((m+1)p). Accordingly, in the circuit blockBL_(m+1) of the circuit block BL_(m) and the circuit block BL_(m+1), thelatch circuit 78 _((m+1)p) is not required to operate, and the counter77 _(m+1) connected to the latch circuit 78 _((m+1)p) is also notrequired to operate, where m=1, 3, . . . , M−1.

Thus, the counter 77 _(m+1) in the circuit block BL_(m+1), connected tothe vertical signal line 73 _((m+1)p) not used to supply the pixelsignal as the result of addition, is not required to operate during theaddition of pixels (when the binning function is turned on), permittinga further reduction in power consumption.

In the above description, the addition of pixels is performed betweenthe two horizontally adjacent pixels. Without limiting to this, theaddition of pixels may be performed among two horizontally adjacentpixels and two vertically adjacent pixels (2×2 pixels) or a total offour pixels, or alternatively among 3×3 pixels or a total of ninepixels.

In addition to the binning function, pixel thinning out (pixel signalthinning out) function may be imparted to the solid-state image pickupdevice 151 of FIG. 7.

That is, the solid-state image pickup device 151 in FIG. 7 has the pixelthinning out function to perform pixel thinning out of the pixels 72 ₂₁,72 ₂₂, . . . , 72 ₂P, and 72 _((m+1)p). When the pixel thinning outfunction is turned on, the pixel signal of the pixel 72 _((m+1)p) isthinned out, eliminating the necessity of processing the pixel signalson the vertical signal line 73 _((m+1)p). Therefore, in the circuitblock BL_(m+1) of the circuit block BL_(m) and the circuit blockBL_(m+1), the latch circuit 78 _((m+1)p) is not required to operate, andthe counter 77 _(m+1) connected to the latch circuit 78 _((m+1)p) isalso not required to operate, where m=1, 3, . . . , M−1.

Thus, the counter 77 _(m+1) of the circuit block connected to thevertical signal line 73 _((m+1)p) not used to supply the pixel signal asa pixel thinning out result, is not required to operate during the pixelthinning out, permitting a further reduction in power consumption.

In the above description, the pixel thinning out is performed everyother pixel (every other column). Without limiting to this, the pixelthinning out may be performed every two or more pixels (every two ormore columns).

FIG. 8 is a block diagram showing a configuration example of still otherembodiment of the solid-state image pickup device to which the presentinvention is applied.

In FIG. 8, the same references have been used as in FIG. 3 for similarcomponents, and the description thereof is omitted.

A solid-state image pickup device 251 of FIG. 8 is identical to thesolid-state image pickup device 51 of FIG. 3 in that circuit blocksBL_(m) have counters 77 _(m). The solid-state image pickup device 251 isdifferent from the solid-state image pickup device 51 in that thecircuit blocks BL_(m) have P/2 pieces of current sources 74 _(mp),comparators 76 _(mp) and latch circuits 78 _(mp), and P/2 pieces ofswitches 271 _(mp).

Under control of a controller (not shown), the switches 271 _(mp)selectively supply pixel signals supplied from vertical signal lines 73_(m(2p−1)) and 73 _(m(2p)), to the comparators 76 _(mp).

Thus, the solid-state image pickup device 251 has the configuration thata single comparator 76 _(mp) is shared between two pixels (two columns)72 _(m(2p−1)) and 72 _(m(2p)).

Although in FIG. 8, a single comparator 76 _(mp) is shared between thetwo pixels (columns) 72 _(m(2p−1)) and 72 _(m(2p)) a single comparator76 _(mp) may be shared among more than two pixels (columns) or n pixels(n columns).

Unlike the Patent Document 1 having P/2 arrangements that a single A/Dconverter (the comparator and the counter) is shared among n columns,the solid-state image pickup device 251 has the arrangement that acounter is shared among P/2 arrangements that a comparator and a latchcircuit are shared among n columns. Therefore, the number of countersneeded for n×(P/2) columns can be reduced from P/2 to one, permitting areduction in power consumption.

As described above, the solid-state image pickup device 51, thesolid-state image pickup device 151 and the solid-state image pickupdevice 251 are capable of reducing the number of the counters 77 _(m),thereby reducing power consumption than the case of providing a counterfor every column. That is, in each of the plurality of circuit blocksBL_(m), the plurality of comparators 76 _(mp) compare a pixel signalsupplied through a vertical signal line connected to vertically alignedpixels 72 _(mp) among the plurality of pixels arranged in the matrix,and the slope signal whose voltage is changed at the constant slope fromthe predetermined initial voltage. In accordance with the comparisonresults of the comparators 76 _(mp), the plurality of latch circuits 78_(mp) store the count values obtained by the counters 77 _(m),corresponding to an elapsed time from when the slope signal voltage ischanged from the initial voltage to the voltage coinciding with thepixel signal.

Although the latch circuits 78 _(mp) store the count values in theembodiments described above, a sample-hold circuit or other storagemedia may store the count values.

Although there has been shown herein and described certain embodimentsof the invention, it will be understood that many changes andmodifications may be made therein without departing from the spirit orscope of the invention.

What is claimed is:
 1. An imaging device comprising: a pixel arraycomprising a plurality of pixels; a plurality of signal lines, each ofwhich is coupled to at least one pixel in the pixel array; a referencesignal generation circuit; a plurality of comparators, each of which iscoupled to at least two of the plurality of signal lines and thereference signal generation circuit; and a plurality of counters,wherein each of the plurality of counters is coupled to at least twocomparators of the plurality of comparators.
 2. The imaging deviceaccording to claim 1, further comprising a plurality of switchingcircuits, wherein each of the plurality of comparators is coupled to atleast two of the plurality of signal lines through one of the pluralityof switching circuits.
 3. The imaging device according to claim 1,wherein each of the plurality of signal lines extends in a firstdirection, and wherein the plurality of counters are arranged in asecond direction different from the first direction.
 4. The imagingdevice according to claim 3, wherein the second direction isperpendicular to the first direction.
 5. The imaging device according toclaim 4, wherein the plurality of pixels in the pixel array are arrangedin a matrix of columns and rows, wherein the first direction correspondsto a column direction in the matrix, and wherein the second directioncorresponds to a row direction in the matrix.
 6. The imaging deviceaccording to claim 1, wherein the imaging device comprises a singlereference signal generation circuit.
 7. The imaging device according toclaim 1, wherein the each of the plurality of counters is coupled to theat least two comparators via at least one latch circuit.
 8. The imagingdevice according to claim 1, wherein the plurality of counters includesfour counters.
 9. The imaging device according to claim 1, wherein thereference signal generation circuit is configured to output a referencesignal.
 10. The imaging device according to claim 9, wherein thereference signal is a slope signal having a voltage that changes from aninitial voltage at a constant slope.
 11. An imaging device comprising: aplurality of pixels arranged in a matrix of columns and rows, theplurality of pixels including a first pixel in an ith column, a secondpixel in an (i+1)th column, a third pixel in a jth column, and a fourthpixel in a (j+1)th column; a first switching circuit; a second switchingcircuit; a first comparator coupled to the first pixel and the secondpixel through the first switching circuit; a second comparator coupledto the third pixel and the fourth pixel through the second switchingcircuit; and a first counter coupled to the first comparator and thesecond comparator.
 12. The imaging device according to claim 11, furthercomprising a reference signal generation circuit, wherein each of thefirst comparator and the second comparator is coupled to the referencesignal generation circuit.
 13. The imaging device according to claim 12,wherein the imaging device comprises a single reference signalgeneration circuit.
 14. The imaging device according to claim 12,wherein the reference signal generation circuit is configured to outputa reference signal, wherein the first comparator is configured tocompare the reference signal to a voltage on the first signal line and avoltage on the second signal line, and wherein the second comparator isconfigured to compare the reference signal to a voltage on the thirdsignal line and a voltage on the fourth signal line.
 15. The imagingdevice according to claim 14, wherein the reference signal is a slopesignal having a voltage that changes from an initial voltage at aconstant slope.
 16. The imaging device according to claim 11, whereinthe first comparator is coupled to the first pixel via a first signalline, and the second pixel via a second signal line, and wherein thesecond comparator is coupled to the third pixel via a third signal line,and the fourth pixel via a fourth signal line.
 17. The imaging deviceaccording to claim 16, wherein each of the first, second, third, andfourth signal lines extends in a first direction, and wherein the firstcomparator and the second comparator are arranged in a second directiondifferent from the first direction.
 18. The imaging device according toclaim 17, wherein the second direction is perpendicular to the firstdirection.
 19. The imaging device according to claim 18, wherein thefirst direction corresponds to a column direction the matrix, and thesecond direction corresponds to a row direction in the matrix.
 20. Theimaging device according to claim 11, wherein the first counter iscoupled to the first comparator via at least one latch circuit.